| PART |
Description |
Maker |
| HM-65162/883 |
RAM, 2Kx8, Asynchronous, CMOS Static, Access Time 70/90ns Max
|
Intersil
|
| AS29F040 AS29F040-120LC AS29F040-150LC AS29F040-15 |
5V 512K x 8 CMOS flash EEPROM, access time 70ns
5V 512K x 8 CMOS flash EEPROM, access time 55ns
5V 512K x 8 CMOS flash EEPROM, access time 90ns
|
ALSC[Alliance Semiconductor Corporation]
|
| AS7C31025A-20TJI AS7C1025A AS7C1025A-10JC AS7C1025 |
3.3V 128K x 8 CM0S SRAM (revolutionary pinout), 12ns access time
3.3V 128K x 8 CM0S SRAM (revolutionary pinout), 20ns access time
5V 128K x 8 CM0S SRAM (revolutionary pinout), 20ns access time
5V/3.3V 128K X 8 CMOS SRAM (Revolutionary pinout) 128K X 8 STANDARD SRAM, 10 ns, PDSO32
5V/3.3V 128K X 8 CMOS SRAM (Revolutionary pinout) 128K X 8 STANDARD SRAM, 20 ns, PDSO32
High Speed CMOS Logic Triple 3-Input NAND Gates 14-SOIC -55 to 125
Parallel-Load 8-Bit Shift Registers 16-VQFN -40 to 85
Parallel-Load 8-Bit Shift Registers 16-SO -40 to 85
High Speed CMOS Logic Quad 2-Input AND Gates 14-SOIC -55 to 125
High Speed CMOS Logic Quad 2-Input AND Gates 14-TSSOP -55 to 125
Parallel-Load 8-Bit Shift Registers 16-SOIC -40 to 85
Parallel-Load 8-Bit Shift Registers 16-TSSOP -40 to 85
5V 128K x 8 CM0S SRAM (revolutionary pinout), 12ns access time
5V 128K x 8 CM0S SRAM (revolutionary pinout), 15ns access time
3.3V 128K x 8 CM0S SRAM (revolutionary pinout), 15ns access time
|
Alliance Semiconductor ...
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| A43L8316AV-5 A43L8316AV-5.5 A43L8316AV-6 A43L8316A |
Cycle time:5ns; 200MHz CL=3 access time:4.5ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:5.5ns; 183MHz CL=3 access time:5.0ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:6ns; 166MHz CL=3 access time:5.5ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:7ns; 143MHz CL=3 access time:6.0ns 128K x 16bit x 2banks synchronous DRAM
|
AMIC Technology
|
| UT6164CJC-10 UT6164CJC-12 UT6164CJC-15 |
Access time: 10 ns, 8 K x 8 Bit high speed CMOS SRAM
Access time: 12 ns, 8 K x 8 Bit high speed CMOS SRAM
Access time: 15 ns, 8 K x 8 Bit high speed CMOS SRAM
|
UTRON Technology
|
| UT62257CLS-35L |
Access time: 35 ns, 32 K x 8 Bit low power CMOS SRAM
|
UTRON Technology
|
| AS4LC256K16E0-35JC AS4LC256K16E0-35TC AS4LC256K16E |
3.3V 256K x 16 CM0S DRAM (EDO), 60ns RAS access time
3.3V 256K x 16 CM0S DRAM (EDO), 45ns RAS access time
3.3V 256K x 16 CM0S DRAM (EDO), 35ns RAS access time
x16 EDO Page Mode DRAM
|
Alliance Semiconductor
|
| M38047M6-XXXFP M38047M6-XXXHP M38047M6-XXXSP M3804 |
3803/04 Group: General Purpose, with Flash
RAM size: 256bytes; single-chip 8-bit CMOS microcomputer
RAM size: 640bytes; single-chip 8-bit CMOS microcomputer
RAM size: 896bytes; single-chip 8-bit CMOS microcomputer
RAM size: 512bytes; single-chip 8-bit CMOS microcomputer
RAM size: 768bytes; single-chip 8-bit CMOS microcomputer
RAM size: 384bytes; single-chip 8-bit CMOS microcomputer
RAM size: 1024bytes; single-chip 8-bit CMOS microcomputer
RAM size: 2048bytes; single-chip 8-bit CMOS microcomputer
RAM size: 1536bytes; single-chip 8-bit CMOS microcomputer
RAM size: 192bytes; single-chip 8-bit CMOS microcomputer
Single Chip 8-bit Microcomputer
|
Mitsubishi Electric Corporation
|
| DS1100LU-25 DS1100LU-35 MAX6917EO30T DS1554W-120IN |
3-Volt 5-Tap Economy Timing Element (Delay Line) SILICON DELAY LINE, TRUE OUTPUT, PDSO8
I<sup>2</sup>C-Compatible RTC with Microprocessor Supervisor, Alarm, and NV RAM Controller REAL TIME CLOCK, PDSO20
256k Nonvolatile, Y2K-Compliant Timekeeping RAM REAL TIME CLOCK, PDIP32
SPI-Compatible RTC with Microprocessor Supervisor, Alarm, and NV RAM Controller REAL TIME CLOCK, PDSO20
1M, Nonvolatile, Y2K-Compliant Timekeeping RAM REAL TIME CLOCK, DMA34
64kB, Nonvolatile, Year-2000-Compliant Timekeeping RAM 0 TIMER(S), REAL TIME CLOCK, DMA34
10-Tap Silicon Delay Line SILICON DELAY LINE, TRUE OUTPUT, PDSO16
Y2K-Compliant Watchdog RTC with NV Control 1 TIMER(S), REAL TIME CLOCK, PDSO32
3-Wire Serial RTC in a TDFN REAL TIME CLOCK, PDSO8
Y2K-Compliant Watchdog Real-Time Clocks 1 TIMER(S), REAL TIME CLOCK, PDSO28
Total-Elapsed-Time Recorder with Alarm 0 TIMER(S), TIME RECORDER, PDSO8
Real-Time Clock 1 TIMER(S), REAL TIME CLOCK, PQCC28
3-in-1 High-Speed Silicon Delay Line SILICON DELAY LINE, TRUE OUTPUT, PDSO8
Y2K兼容、非易失时钟RAM REAL TIME CLOCK, DMA34
SmartWatch RAM DS1216B/C/D/HSmartWatch ROM DS1216E/F SmartWatch RAM DS1216B/C/D/HSmartWatch ROM DS1216E/F
I<sup>2</sup>C Serial Real-Time Clock 1 TIMER(S), REAL TIME CLOCK, PDSO8
I<sup>2</sup>C RTC with Trickle Charger REAL TIME CLOCK, PDSO8
Phantom Time Chip 幻影时钟芯片
8-Bit Programmable Timing Element SILICON DELAY LINE, TRUE OUTPUT, PDSO16
0 TIMER(S), REAL TIME CLOCK, PDIP8
0 TIMER(S), REAL TIME CLOCK, DMA32
0 TIMER(S), REAL TIME CLOCK, DSO34
1 TIMER(S), REAL TIME CLOCK, PDIP32
0 TIMER(S), REAL TIME CLOCK, DMA28
0 TIMER(S), REAL TIME CLOCK, PDIP32
0 TIMER(S), REAL TIME CLOCK, PDSO8
0 TIMER(S), REAL TIME CLOCK, PDIP16
3V??0?藉ご纭?欢杩?嚎
瀹???堕?
|
Maxim Integrated Products, Inc.
DALLAS SEMICONDUCTOR
MAXIM INTEGRATED PRODUCTS INC
|
| 5962F9687301QXA 5962F9687301QXX 5962F9687301QYA 59 |
Radiation-hardenet 8Kx8 PROM: SMD. 35ns access time, TTL inputs, CMOS/TTL compatible outputs. Class Q. Lead finish solder. Total dose 3E5rads(Si)
Radiation-hardenet 8Kx8 PROM: SMD. 35ns access time, TTL inputs, CMOS/TTL compatible outputs. Class Q. Lead finish optional. Total dose 3E5rads(Si)
Radiation-hardenet 8Kx8 PROM: SMD. 35ns access time, TTL inputs, CMOS/TTL compatible outputs. Class Q. Lead finish gold. Total dose 3E5rads(Si)
Radiation-hardenet 8Kx8 PROM: SMD. 45ns access time, TTL inputs, CMOS/TTL compatible outputs. Class Q. Lead finish solder. Total dose 3E5rads(Si)
Radiation-hardenet 8Kx8 PROM: SMD. 45ns access time, TTL inputs, CMOS/TTL compatible outputs. Class Q. Lead finish gold. Total dose 3E5rads(Si)
Radiation-hardenet 8Kx8 PROM: SMD. 45ns access time, TTL inputs, CMOS/TTL compatible outputs. Class Q. Lead finish optional. Total dose 3E5rads(Si)
Radiation-hardenet 8Kx8 PROM: SMD. 45ns access time, TTL inputs, CMOS/TTL compatible outputs. Class V. Lead finish solder. Total dose 3E5rads(Si)
Radiation-hardenet 8Kx8 PROM: SMD. 45ns access time, TTL inputs, CMOS/TTL compatible outputs. Class V. Lead finish gold. Total dose 3E5rads(Si)
Radiation-hardenet 8Kx8 PROM: SMD. 45ns access time, TTL inputs, CMOS/TTL compatible outputs. Class V. Lead finish optional. Total dose 3E5rads(Si)
Radiation-hardenet 8Kx8 PROM: SMD. 45ns access time, TTL inputs, CMOS/TTL compatible outputs. Class Q. Lead finish solder. Total dose 5E5rads(Si)
Radiation-hardenet 8Kx8 PROM: SMD. 45ns access time, TTL inputs, CMOS/TTL compatible outputs. Class Q. Lead finish gold. Total dose 5E5rads(Si)
Radiation-hardenet 8Kx8 PROM: SMD. 35ns access time, TTL inputs, CMOS/TTL compatible outputs. Class V. Lead finish gold. Total dose 3E5rads(Si)
Radiation-hardenet 8Kx8 PROM: SMD. 35ns access time, TTL inputs, CMOS/TTL compatible outputs. Class Q. Lead finish gold. Total dose 5E5rads(Si)
Radiation-hardenet 8Kx8 PROM: SMD. 35ns access time, TTL inputs, CMOS/TTL compatible outputs. Class V. Lead finish optional. Total dose 3E5rads(Si)
Radiation-hardenet 8Kx8 PROM: SMD. 35ns access time, TTL inputs, CMOS/TTL compatible outputs. Class Q. Lead finish solder. Total dose 5E5rads(Si)
Radiation-hardenet 8Kx8 PROM: SMD. 35ns access time, TTL inputs, CMOS/TTL compatible outputs. Class V. Lead finish optional. Total dose 5E5rads(Si)
Radiation-hardenet 8Kx8 PROM: SMD. 35ns access time, TTL inputs, CMOS/TTL compatible outputs. Class V. Lead finish solder. Total dose 5E5rads(Si)
|
Aeroflex Circuit Technology
|
| M38513M4 M38513M4-C56FP 3851GROUP M38512M4 M38513M |
Single-chip 8-bit CMOS microcomputer. PROM 16K bytes, RAM 512 bytes. One time PROM version.
Single-chip 8-bit CMOS microcomputer. PROM 24K bytes, RAM 640 bytes. One time PROM version.
Single Chip 8-Bit CMOS Microcomputer
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
|
